Method for the epitaxial growth of a semiconductor structure
文献类型：专利
| 作者 | GALEUCHET YVAN; GRAF VOLKER; HEUBERGER WILHELM; ROENTGEN PETER |
| 发表日期 | 1990-09-10 |
| 专利号 | CA2006266A1 |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 国家 | 加拿大 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for the epitaxial growth of a semiconductor structure |
| 英文摘要 | ABSTRACT A method, and devices produced therewith, for the epi-taxial growth of sub-micron semiconductor structures withat least one crystal plane dependently grown, buriedactive layer (24) consisting of a III-V compound. Theactive layer (24) and adjacent embedding layers (23, 25)form a heterostructure produced in a one-step growthprocess not requiring removal of the sample from thegrowth chamber inbetween layer depositions. The layers ofthe structure are grown on a semiconductor substrate (21)having a structured surface exposing regions of differentcrystal orientation providing growth- and no-growth-planes for the selective growth process. The methodallows the production of multiple, closely spaced activelayers and of layers consisting of adjoining sectionshaving different physical properties. |
| 公开日期 | 1990-09-10 |
| 申请日期 | 1989-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88149]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 推荐引用方式 GB/T 7714 | GALEUCHET YVAN,GRAF VOLKER,HEUBERGER WILHELM,et al. Method for the epitaxial growth of a semiconductor structure. CA2006266A1. 1990-09-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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