Optical semiconductor device
文献类型：专利
| 作者 | ITO, YOSHIHIRO; KADOTA, MICHIO |
| 发表日期 | 2004-04-29 |
| 专利号 | WO2004036659A1 |
| 著作权人 | MURATA MANUFACTURING CO., LTD. |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | An optical semiconductor device comprising a desired compound semiconductor layer having a band gap energy (Eg) smaller than that of ZnO. An n-type contact layer (6), an n-type cladding layer (7), an active layer (8), a p-type cladding layer (9) and a p-type contact layer (10) are formed in this order on a ZnO monocrystal substrate (1). The active layer (8) is expressed by a composition formula of BaxZn1-xO (wherein 0 < x < 0.55), and made of a mixed crystal compound wherein ZnO is dissolved in the Ba component so that the band gap energy (Eg) becomes smaller than that of ZnO. The n-type cladding layer (7) and the p-type cladding layer (9) are made of a compound semiconductor which has a larger band gap energy (Eg) than the active layer (8) and is expressed by a composition formula of MgzZn1-zO (wherein 0 ≤z <1). |
| 公开日期 | 2004-04-29 |
| 申请日期 | 2003-09-16 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88157]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MURATA MANUFACTURING CO., LTD. |
| 推荐引用方式 GB/T 7714 | ITO, YOSHIHIRO,KADOTA, MICHIO. Optical semiconductor device. WO2004036659A1. 2004-04-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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