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文献类型：专利
| 作者 | KAWAGUCHI HITOSHI |
| 发表日期 | 1987-11-19 |
| 专利号 | JP1987055318B2 |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To highly stabilize the oscillation wavelength of a semiconductor laser by externally varying the temperature, injection current value or the refractive index of the waveguide of the laser, thereby varying the oscillation wavelength and coinciding with the absorption beam of CH4 gas in wavelength. CONSTITUTION:A double hetero structure semiconductor laser 1 for oscillating in 0.8-8mum band is controlled at its temperature in a constant-temperature oven 2, the refractive index of the active region is varied, or DC bias is controlled to secure the wavelength. That is, AC current is applied through the oscillator 7 to the laser 1 to perform the frequency modulation. The laser light is received through a CH4 cell 3 by a Ge photodetector 5, is amplified by an amplifier 6, and is converted to a DC error signal by a demodulator 10. Subsequently, the AC composnent is removed by a filter 11, and the DC component is fed back through a DC amplifier 9 to the laser In this manner, the refractive index of the active region will vary, and the oscillation wavelength will vary. When this wavelength coincides with the absorption beam of CH4, the output of the photodetector 5 becomes minimum with the result that the DC bias of the laser 1 is controlled to meet at the point. |
| 公开日期 | 1987-11-19 |
| 申请日期 | 1980-10-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88158]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | KAWAGUCHI HITOSHI. -. JP1987055318B2. 1987-11-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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