Manufacture of semiconductor device
文献类型：专利
| 作者 | YURI MASAAKI; OTA KAZUNARI |
| 发表日期 | 1990-09-25 |
| 专利号 | JP1990241028A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To form semiconductor layer excellent in crystallizability with high reproducibility in a second crystal growth process by a method, when the second crystal growth process by MOCVD method is started, the ratio of group V material molecule supply mole number to group III material molecule mole number is made equal to or less than a specified value. CONSTITUTION:By MOCVD method, a second compound semiconductor layer 7 containing group III and group V is crystal grown on a first compound semiconductor layer 5 containing Al in the composition. In this case, when the crystal growth is started, the ratio of the group V material molecule supply mole number to the group H material molecule supply mole number is made equal to or less than 20. For example, on the N-type GaAs 1 the following are grown; an N-type GaAs buffer layer 2, an N-type AlyGa1-yAs clad layer 3, an AlxGa1-xAs active layer 4, a P-type AlyGa1-yAs clad layer 5, and an N-type GaAs current blocking layer 6. A trench reaching the P-type AlyGa1-y As clad layer 5 is formed. By the second crystal growth process, a P-type AlyGa1-yAs clad layer 7 and a P-type GaAs cap layer 8 are grown, and the second crystal growth process is started in the above-mentioned manner. |
| 公开日期 | 1990-09-25 |
| 申请日期 | 1989-03-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88159]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YURI MASAAKI,OTA KAZUNARI. Manufacture of semiconductor device. JP1990241028A. 1990-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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