Optical integrated element and manufacture thereof
文献类型：专利
| 作者 | ADAKA SABURO |
| 发表日期 | 1986-09-06 |
| 专利号 | JP1986201463A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical integrated element and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a small-sized optical integrated element corresponding at high speed by manufacturing a light-emitting section or a light-receiving section and a field-effect type transistor in a monolithic manner. CONSTITUTION:Striped grooves are manufactured to Cr-doped or un-doped semi-insulating GaAs by a phosphoric acid group etching liquid by using a photo-resist, N-type GaAs is grown through liquid-phase growth, and N-type GaAs 5 is left only in the striped groove sections 6 through etching. An I layer 7 is grown on the GaAs 5 through liquid-phase growth, and the fundamental structure of a photodiode section 9 and a FET section 8 is manufactured through etching. The photodiode section takes an octagonal shape, and an interior angle alphais made larger than 90 deg., thus enabling lithography in the manufacture of the FET section. |
| 公开日期 | 1986-09-06 |
| 申请日期 | 1985-03-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88161]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | ADAKA SABURO. Optical integrated element and manufacture thereof. JP1986201463A. 1986-09-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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