Semiconductor laser device and method for manufacturing the same
文献类型：专利
| 作者 | HASHIMOTO, TAKAHIRO |
| 发表日期 | 2005-03-10 |
| 专利号 | US20050053108A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and method for manufacturing the same |
| 英文摘要 | A semiconductor laser device has a ridge portion composed of a cladding layer and a cap layer laid on top of the cladding layer, and a filling layer formed on opposite lateral sides of the ridge portion. A top surface of the cap layer and a top surface of the filling layer meet at an angle of 135° or larger but not larger than 180° on an upper side of the cap layer. In manufacturing the device, after a filling layer is formed so as to cover the ridge portion, an insulating film is formed and a portion above the ridge portion is selectively removed from the insulating film to expose the filling layer. Then, the exposed filling layer is removed till a top surface of the ridge portion is exposed. |
| 公开日期 | 2005-03-10 |
| 申请日期 | 2004-09-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88163]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HASHIMOTO, TAKAHIRO. Semiconductor laser device and method for manufacturing the same. US20050053108A1. 2005-03-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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