Semiconductor laser
文献类型：专利
| 作者 | ENDO KENJI |
| 发表日期 | 1991-04-22 |
| 专利号 | JP1991096289A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To inhibit deterioration produced on an end face and provide a high output and long life semiconductor laser by further reducing the thickness of a semiconductor laser with lower heat conductivity out of the semiconductor layers positioned near an activity layer at a spot near a resonator compared with that in the central part. CONSTITUTION:On an n type GaAs substrate 1, a semiconductor laser comprises an n type AlxGa1-xAs clad later, AlyGa1-yAs activity layer 3, a p type AlzGa1-zAs clad layer 4, a p type GaAs cap layer 5, an n type GaAs block layer 6, electrodes 7 and 8, and a resonator side 10. More specifically, the central part consists of the p type AlaGa1-aAs 5mum thick clad layer 4, the Ga 50.5mum thick cap. In a region 11 near the side of the resonator about 20mum distant the end face is formed a 0.5mum thick p type AlzGa1-zAs clad layer 4 with a lower conductivity while a 5mum thick with a higher conductivity is formed. |
| 公开日期 | 1991-04-22 |
| 申请日期 | 1989-09-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88164]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | ENDO KENJI. Semiconductor laser. JP1991096289A. 1991-04-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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