Semiconductor laser
文献类型：专利
| 作者 | NUMAI TAKAAKI |
| 发表日期 | 1989-03-28 |
| 专利号 | JP1989082687A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To form a semiconductor laser which operates in a stable single axial mode to be able to modulate at a high speed with low threshold and high efficiency by forming a groove by etching between a window region and a region except the window region, and forming an insulating layer by proton or ion implanting. CONSTITUTION:A lambda/4 shift diffraction grating having 2400Angstrom of period is formed by an interference exposure method employing a phase shifting film on an N-type InP substrate 110. Then, in a first LPE growth, a nondoped InGaAsP optical guide layer 120, an N-type InP buffer layer 130, a nondoped active layer 140, and a P-type InP clad layer 150 are sequentially grown. Then, after it is etched to form a buried structure and a window structure, a buried growth is conducted by second LPE growth, thereby forming a window structure. Eventually, after electrodes are formed on a substrate side and a grown layer side, a groove 500 is formed except the vicinity of a central mesa between the region 100 and an active region 200. Thereafter, SiNx films 300 are formed on both end faces. |
| 公开日期 | 1989-03-28 |
| 申请日期 | 1987-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88165]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | NUMAI TAKAAKI. Semiconductor laser. JP1989082687A. 1989-03-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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