Semiconductor device structure
文献类型：专利
| 作者 | CHEN, CHUNG YIH; CHO, ALFRED YI; CHU, SUNG-NEE GEORGE |
| 发表日期 | 1986-12-17 |
| 专利号 | EP0205164A2 |
| 著作权人 | AT&T CORP. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device structure |
| 英文摘要 | This invention is a semiconductor device (e.g. 10) comprising at least one semiconductor element which comprises a first epitaxial region (e.g. 13) comprising InP or III-V semiconductor compound approximately lattice-matched to InP, a gate electrode (e.g. 19), and a second epitaxial region (e.g. 14 and 15) contacting both the first epitaxial region and the gate electrode. The improvement resides in the use of the second epitaxial region consisting essentially of gallium arsenide with thicknesses greater than 70 nm. The invention is especially suitable for use in field effect transistors. Useful field effect transistors can be made with gallium indium arsenide as the electron conducting layer (channel layer) by incorporating a layer of gallium arsenide for the Schottky barrier. Relatively thick gallium arsenide layers (e.g. greater than 70 nm.) are used to achieve low reverse leakage currents. |
| 公开日期 | 1986-12-17 |
| 申请日期 | 1986-06-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88171]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T CORP. |
| 推荐引用方式 GB/T 7714 | CHEN, CHUNG YIH,CHO, ALFRED YI,CHU, SUNG-NEE GEORGE. Semiconductor device structure. EP0205164A2. 1986-12-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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