Production of semiconductor light emitting apparatus
文献类型：专利
| 作者 | ISSHIKI KUNIHIKO |
| 发表日期 | 1992-05-12 |
| 专利号 | JP1992137781A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Production of semiconductor light emitting apparatus |
| 英文摘要 | PURPOSE:To improve reproducibility of good characteristic through formation of a current path matching with bending active region with high precision by comparatively simple structure by forming an ion injection mask at the groove position just above the active stripe on the self-aligning basis. CONSTITUTION:After a striped groove is formed on an N type GaAs substrate 11, AlGaAs multilayer films 12 to 15 having the bending area 16 corresponding to the groove of substrate are grown. Next, the flat resist surface is obtained by coating the wafer surface with a photoresist 3. Next, the photoresist 3 is partially removed so that the protruding area of wafer is exposed and the interior of groove is filled with the resist. Next, using the photoresist 3 as the mask, proton is injected to the entire surface of wafer to give a high resistance to the region 5, which will operate as the active region, other than the bending area. Therefore, a problem that element characteristic is fluctuated due to fluctuation of positioning can be eliminated. |
| 公开日期 | 1992-05-12 |
| 申请日期 | 1990-09-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88175]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ISSHIKI KUNIHIKO. Production of semiconductor light emitting apparatus. JP1992137781A. 1992-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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