Manufacture of semiconductor laser
文献类型：专利
| 作者 | NARUI HIRONOBU; HIRATA SHOJI |
| 发表日期 | 1992-12-15 |
| 专利号 | JP1992361587A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To enable a semiconductor laser to be formed by use of a single kind of dopant by a method wherein a P-type clad region turned into P-type through a high-order crystal plane region and a current block region turned into N-type through a low-order crystal plane region are formed on an undoped layer. CONSTITUTION:A groove 2 is provided onto the primary surface 1S of {100} crystal plane of an N-type substrate 1 extending in the direction of a crystal axis, and an N-type clad layer 4, an active layer 5, and an undoped layer 6 are made to grow on the N-type substrate 1 through an MOCVD method. A high-order crystal plane region 10 is formed at the center of the groove 2, and a low-order {311} B crystal plane region 11 is formed on both the sides of the region 10. A P-type clad region 13 turned into P-type through the high- order crystal plane region 10 and a current block region 14 turned into N-type through the low-order {311} B crystal plane region 11 are induced on the undoped layer 6. By this setup, a semiconductor laser where an active layer of high-order crystal plane region is made to serve as a light emitting region can be obtained. |
| 公开日期 | 1992-12-15 |
| 申请日期 | 1991-06-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88176]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | NARUI HIRONOBU,HIRATA SHOJI. Manufacture of semiconductor laser. JP1992361587A. 1992-12-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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