Formation of semiconductor multilayer thin film
文献类型：专利
| 作者 | AKASAKI ISAMU; HIRAMATSU KAZUMASA; TANAKA NARIYASU |
| 发表日期 | 1990-10-12 |
| 专利号 | JP1990253613A |
| 著作权人 | UNIV NAGOYA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of semiconductor multilayer thin film |
| 英文摘要 | PURPOSE:To improve characteristics as compared with a normal double hetero laser diode by using the thin-film multilayer structure of two specific compounds as an active layer of a laser diode. CONSTITUTION:By using the liquid phase epitaxial growth method, an InxGa1-xAsyP1-y of 500Angstrom or less in thickness (however, 0.47<=x<=0.52, 0<=y<=0.03) and an InuGa1-uAsvP1-v of 500Angstrom or less in thickness (where, the range of v is 0.03<=v<=1 and the value range which u takes is 0.47-0.49v<=u<=0.52-0.49v indicating a condition that InuGa1-uAsvP1-v is in relation of lattice matching to a GaAs substrate. The condition is added.) are allowed to grow in multiple layers on the GaAs substrate exceeding one cycle. Thus, it becomes possible to obtain an improved multilayer structure. |
| 公开日期 | 1990-10-12 |
| 申请日期 | 1989-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88177]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | UNIV NAGOYA |
| 推荐引用方式 GB/T 7714 | AKASAKI ISAMU,HIRAMATSU KAZUMASA,TANAKA NARIYASU. Formation of semiconductor multilayer thin film. JP1990253613A. 1990-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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