Manufacture of light emitting device
文献类型：专利
| 作者 | SUGIMOTO MITSUNORI; HAMAO NOBORU |
| 发表日期 | 1990-05-16 |
| 专利号 | JP1990128481A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of light emitting device |
| 英文摘要 | PURPOSE:To decrease a buried region in area by a method wherein a light emitting region is composed of a buried wide gap layer whose quantum well is desordered by the diffusion of impurity to make a surface recombination very small and the buried region by a Zn diffusion is etched to remove so as to make a leakage current small. CONSTITUTION:The followings are laminated and made to grow on an N-type GaAs substrate 1: an N-type clad layer 2 (AlXCGa1-XCAs, 0.45<=XC<=0.85, 0.8-3mum thick); an active layer 3 (GaAs quantum well 100Angstrom , Al0.5As0.5 barrier layer 50Angstrom , five period multi-quantum well); a P-type clad layer 4 (AlXCGa1-XCAs, 0.8-3mum thick); and a P-type cap layer 5 (GaAs 1000-500Angstrom thick). Then, two or more Zn layers 7 are formed through diffusion using an SiO2 mask 6 penetrating into the layer 2, the layers 7 are removed through a reactive ion etching method to leave a thin layer formed of the layer 7 on the circumferential faces of the layers 5, 4, 3, and 2 left unremoved, and a recessed part is provided to the rear of the substrate 1 and a light emitting window 12 is provided there. |
| 公开日期 | 1990-05-16 |
| 申请日期 | 1988-11-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88178]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SUGIMOTO MITSUNORI,HAMAO NOBORU. Manufacture of light emitting device. JP1990128481A. 1990-05-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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