Manufacture of photo-semiconductor device
文献类型：专利
| 作者 | OKAZAKI JIROU; KUSUKI TOSHIHIRO |
| 发表日期 | 1983-11-08 |
| 专利号 | JP1983191428A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of photo-semiconductor device |
| 英文摘要 | PURPOSE:To change a luminous wavelength of an InGaAsP layer easily to the short wavelength side, to increase the degree of freedom on the manufacture of an element and to improve the controllability of the luminous wavelength by chaning the quantity of Sn or Te added to an InGaAsP growth solution. CONSTITUTION:The device is manufactured by forming an n-InP clad layer 4, an n-InGaAsP active layer 3, a p-InP clad layer 2 and a p-InGaAsP contact layer 1 on an n-InP substrate 5 in th figure, and Sn is further added to an active layer solution, the quantity of Sn therein is 5mg Sn/Ingr or less (corresponding to a normal n-type dope) and which has a wavelength of 51mum, and the active layer is grown in an epitaxial manner in the n-InGaAsP layer 3 when an epitaxial wafer for 5mum band InGaAsP/an InP light-emitting diode is grown through a liquid phase epitaxial method. A PL luminous wavelength of the n- InGaAsP active layer 3 can be changed up to 45mum from 51mum because Sn for controlling the luminous wavelength is added. |
| 公开日期 | 1983-11-08 |
| 申请日期 | 1982-05-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88179]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | OKAZAKI JIROU,KUSUKI TOSHIHIRO. Manufacture of photo-semiconductor device. JP1983191428A. 1983-11-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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