Manufacture of semiconductor laser of algaas/gaas buried structure
文献类型：专利
| 作者 | SUGIMOTO MITSUNORI |
| 发表日期 | 1989-07-12 |
| 专利号 | JP1989175790A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser of algaas/gaas buried structure |
| 英文摘要 | PURPOSE:To reduce a leakage current flowing through a buried layer and thereby reduce a threshold current by forming a mesa stripe by removing or thinning an upper side cladding layer of a double-hetero structure introducing Si into the bottom of said mesa stripe and further introducing Ga into the same. CONSTITUTION:The title semiconductor laser is manufactured, that comprises a double-hetero structure in which an active layer 3 having a quantum well structure is put between upper and lower side cladding layers 4, 2. Thereupon, a recessed part is formed such that side double-hetero structure forms a protruded stripe 6 by removing or thining the upper side cladding layer 4 located on a predetermined region of the double-hetero structure formed on a substrate Then, Si is introduced into the recessed part, and further Ga is introduced into a region 8 where the Si has been introduced. Thus, the quantum well structure is made amorphous and highly electrically resistant by ion implantation of Si and Ga assuring the manufacture of a buried structure semiconductor laser with a reduced leakage current. |
| 公开日期 | 1989-07-12 |
| 申请日期 | 1987-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88190]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SUGIMOTO MITSUNORI. Manufacture of semiconductor laser of algaas/gaas buried structure. JP1989175790A. 1989-07-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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