Semiconductor laser device
文献类型：专利
| 作者 | TATSUOKA KAZUKI; KUME MASAHIRO; SHIMIZU YUICHI |
| 发表日期 | 1991-01-21 |
| 专利号 | JP1991011781A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To realize a mirror of low reflectivity so as to stabilize a semiconductor laser device of this design in output optical power by a method wherein a dielectric film of SiO2 lambda/4 in thickness is laminated on a dielectric film of TiZrO4 thick the same as the former to form a dielectric thin film. CONSTITUTION:A dielectric thin film is formed on one of the end faces of a semiconductor laser which constitute a mirror, the dielectric thin film concerned is composed of a TiZrO4 dielectric lambda/4 in thickness and a SiO2 dielectric lambda/4 in thickness laminated on the former. When the dielectric thin film combined as above is employed as a coating, a low reflective mirror, whose reflectivity is independent of the thickness of a coating and the oscillation wavelength. lambdaof the semiconductor laser, can be obtained. When a mirror is coated with the film concerned, a high power semiconductor laser can outputs an optical power stably. |
| 公开日期 | 1991-01-21 |
| 申请日期 | 1989-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88195]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TATSUOKA KAZUKI,KUME MASAHIRO,SHIMIZU YUICHI. Semiconductor laser device. JP1991011781A. 1991-01-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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