半導体発光素子の製造方法
文献类型：专利
| 作者 | 細井 洋治; 小林 正男; 的場 昭大; 鹿島 保昌 |
| 发表日期 | 1999-11-05 |
| 专利号 | JP2999520B2 |
| 著作权人 | 沖電気工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光素子の製造方法 |
| 英文摘要 | PURPOSE:To enable a radiation beam to be oscillated in a basic mode and to make a light emitting diode high in emission efficiency and low in threshold current by a method wherein a semiconductor layer which is made to serve as a current blocking layer is made to grow on a board-like region where a protrusion is not provided, the semiconductor layer to serve as a first current blocking layer is subjected to a melt etching process to be thin as prescribed into a first current blocking layer, and a second current blocking layer is provided onto the first current blocking layer. CONSTITUTION:An N-InP layer is formed on the region of a P-InP substrate where a mesa stripe 6 is not provided. The N-InP layer is melt-etched using an SiO2. thin film 5 as a mask to form a first current blocking layer 7a. In succession, a P-InP layer is grown on the first current blocking layer 7a to form a second current blocking layer 8. The second current blocking layer 8 is formed so as to come into contact with a new plane 4b of a second clad layer 4 which is formed by removing a part 4a of a second clad layer 4 in contact with an N-InP layer 7. |
| 公开日期 | 2000-01-17 |
| 申请日期 | 1990-07-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88196]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 沖電気工業株式会社 |
| 推荐引用方式 GB/T 7714 | 細井 洋治,小林 正男,的場 昭大,等. 半導体発光素子の製造方法. JP2999520B2. 1999-11-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。