Semiconductor laser device
文献类型：专利
| 作者 | HIRAYAMA FUKUICHI; NAKANO MUNEAKI; WADA MASARU |
| 发表日期 | 1988-07-26 |
| 专利号 | JP1988181495A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To inject efficiently an electric current into a groove part by forming chemical compound semiconductor layers consisting of the first clad layer, an active layer, the second clad layer as well as a top layer having a forbidden band which is broader than that of a semiconductor on a semiconductor substrate having two parallel protruding parts and by forming a zinc diffused region that reaches the second clad layer after passing through the top layer. CONSTITUTION:Two parallel ridges are formed on an N-type GaAs substrate 1 by interposing a groove between two ridges. The first clad layer 3 of an N-type Ga0.55Al0.44As, an active layer 4 of a non-doped Ga0.92Al0.08As, the second clad layer 5 of a P-type Ga0.56Al0.44As, a top layer 6 of an N-type Ga0.9Al0.1As grow in sequence on the ridges as the first, the second, the third, and the fourth layers respectively. After a V-shaped groove 7 is formed at the top layer 6 of the fourth layer located right above this groove, zinc is diffused on the whole plane of this layer and a zinc diffused region 7 is formed. After that, a P-side ohmic electrode 8 and an N-side ohmic electrode 9 are formed. A prepared wafer is cloven and a laser device is obtained. |
| 公开日期 | 1988-07-26 |
| 申请日期 | 1987-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88203]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HIRAYAMA FUKUICHI,NAKANO MUNEAKI,WADA MASARU. Semiconductor laser device. JP1988181495A. 1988-07-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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