Buried type semiconductor light emitting element
文献类型：专利
| 作者 | NAKAI AKINOBU; OKAMOTO HIROSHI |
| 发表日期 | 1991-07-02 |
| 专利号 | JP1991154392A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor light emitting element |
| 英文摘要 | PURPOSE:To reduce the threshold current density value to decrease the modulation distortion by burying a current blocking layer having p-n junction in both sides of a mesa including an active layer with a clad layer having high resistance therebetween. CONSTITUTION:A p-type InP clad layer 2, an InGaAsP active layer 3, and an n-type InP clad layer 4 are successively grown on a p-type InP substrate 1, and a mesa shape is formed by suitable etching process. Then, during the burying growth, first a high resistance n-type non-doped InP layer 9 is grown to cover the side surface of the active layer 3, then a p-type InP layer 6 is laminated to form a current blocking layer, and further an n-type InP clad layer 6 and an n-type InGaAsP cap layer 8 are grown on the whole surface. In this manner, both sides of the mesa are covered with a high resistance second conductivity type layer, so that the current in the channel from the second conductivity type layer in the current blocking layer to the second conductivity type clad layer on the active layer is decreased and the threshold current value is also decreased. Thus, the modulation distortion can be reduced. |
| 公开日期 | 1991-07-02 |
| 申请日期 | 1989-11-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88205]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | NAKAI AKINOBU,OKAMOTO HIROSHI. Buried type semiconductor light emitting element. JP1991154392A. 1991-07-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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