Semiconductor laser element
文献类型：专利
| 作者 | SUZAKI SHINZO |
| 发表日期 | 1991-12-16 |
| 专利号 | JP1991285379A |
| 著作权人 | FUJIKURA LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce an oscillation threshold value current, to improve a light output and efficiency and to improve a far field pattern by providing two sets or more of combinations each having two layers of a first conductivity type compound semiconductor block layer and a second conductivity type compound semiconductor block layer. CONSTITUTION:A first p-type InP buffer layer 2, an n-type InP block layer 3, a p-type InP block layer 4 and an undoped InGaAsP layer 10 are sequentially formed on a p-type InP substrate 1 by a first crystal growing. Then, the layer 10 is used as an etching mask to etch by a chemical method. Thus, one V-shaped groove 9 reaching the layer 2 is formed through the layers 4 and 3 of any layer partly of the layer 10. Thereafter, a second crystal growing is performed, a second p-type InP buffer layer 5 is formed in the groove 9 and on the uppermost p-type InP block layers 4 at both sides of the groove 9, and an InGaAsP active layer 6, an n-type InP clad layer 7 and an n-type InGaAsP cap layer 8 are sequentially formed. |
| 公开日期 | 1991-12-16 |
| 申请日期 | 1990-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88206]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA LTD |
| 推荐引用方式 GB/T 7714 | SUZAKI SHINZO. Semiconductor laser element. JP1991285379A. 1991-12-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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