Manufacture of distributed feedback type semiconductor laser
文献类型：专利
| 作者 | KAWAMA YOSHITATSU; KAKIMOTO SHOICHI; SAKAKIBARA YASUSHI; NAKAJIMA YASUO; TAKEMOTO AKIRA |
| 发表日期 | 1990-10-29 |
| 专利号 | JP1990264491A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To make the period of a diffraction grating double that of a conventional one to improve it in controllability for the stabilization of it in characteristics by a method wherein an active layer is grown on the atomic step part of a diffraction grating thermally deformed into a sine wave. CONSTITUTION:A diffraction grating is formed on the surface of a conductive semiconductor substrate 1, then the diffraction grating is formed into a sine wave shape through annealing, and a part 5 where an active layer is dense and a part 6 where the active layer is sparse are formed on the surface of the thermally deformed diffraction grating 3 through an atomic layer epitaxial growth method. At this point, the active layer 4 is formed on the atomic step part of the diffraction grating 3, which process is so controlled as to enable the active layer to vary periodically ion density. Lastly, a conductive type semiconductor layer 7 is formed on the active layer 4, and conductive type electrodes 8 and 9 are provided respectively. |
| 公开日期 | 1990-10-29 |
| 申请日期 | 1989-04-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88209]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KAWAMA YOSHITATSU,KAKIMOTO SHOICHI,SAKAKIBARA YASUSHI,et al. Manufacture of distributed feedback type semiconductor laser. JP1990264491A. 1990-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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