半導体レ-ザ
文献类型：专利
| 作者 | 岩野 英明 |
| 发表日期 | 1995-11-13 |
| 专利号 | JP1995105557B2 |
| 著作权人 | セイコーエプソン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | PURPOSE:To subject only basic lateral mode oscillation to control through effective entrapment for the realization of a low oscillation-threshold semiconductor laser capable of a stable, high-power oscillation by a method wherein the angle, to be formed between a side of a stripe-geometry rib with its two ends buried in a II-VI compound semiconductor and a junction flat surface, is set to be within specified limits. CONSTITUTION:In a double heterojunction type semiconductor laser constructed of a III-V compound semiconductor active layer 105 and two clad layers 104 and 106, a stripe-geometry rib is formed, to reach the level half the depth of the clad layer 106 just on the active layer 105, and both ends of the rib are buried in a II-VI compound semiconductor layer 107. The angle 201 between a side of the rib and a junction flat surface is designed to be 50-120 deg. For example, on an n-type GaAs single-crystal substrate 102, an n-type GaAs buffer layer 103, an n-type AlGaAs clad layer 104, a GaAs or AlGaAs active layer 105, a P-type AlGaAs 106, and a P-type GaAs contact layer 108 are provided, and both ends of the inverted mesa-geometry rib of the layer 106 is buried in a II-VI compound semiconductor layer 107 built for example of ZnSe. |
| 公开日期 | 1995-11-13 |
| 申请日期 | 1986-12-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88216]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | セイコーエプソン株式会社 |
| 推荐引用方式 GB/T 7714 | 岩野 英明. 半導体レ-ザ. JP1995105557B2. 1995-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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