Semiconductor laser device
文献类型：专利
| 作者 | UMEDA JIYUNICHI; KURODA TAKAROU; KAJIMURA TAKASHI; YAMASHITA SHIGEO |
| 发表日期 | 1984-05-31 |
| 专利号 | JP1984094485A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable to obtain a semiconductor laser device which can be readily manufactured and has stable lateral mode by forming in the manner that the numbers of crystal layers contained in the distribution width of a laser light in a direction perpendicular to the surface of the layer are different to each other between the center and the both sides of stripe electrodes. CONSTITUTION:A crystal layer 4, a clad layer 3, an active layer 1, a clad layer 2 and a stripe electrode 7 are formed on a substrate 8. The vertical distribution of laser light spreads over the numbers of crystal layers which are different to each other between the inside and the outside of the electrode 7. In other words, the vertical distribution 5 inside the electrode 7 spreads over three layers 1-3, while the light distribution 6 outside the electrode 7 spreads over the four layers 1-4. As a result, when the aluminum mixture ratio of the layer is suitably selected, the effective refractive index inside the electrode 7 becomes large, and the mode formed in the photowave guide is stabilized. |
| 公开日期 | 1984-05-31 |
| 申请日期 | 1983-10-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88220]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | UMEDA JIYUNICHI,KURODA TAKAROU,KAJIMURA TAKASHI,et al. Semiconductor laser device. JP1984094485A. 1984-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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