Semiconductor laser
文献类型：专利
| 作者 | FURUSE TAKAO |
| 发表日期 | 1986-04-19 |
| 专利号 | JP1986077382A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the title device excellent in low-noise characteristic by a method wherein this device is equipped with at least a pair of resonator surfaces and an active region contributed to light emission, and further the directional angle of emitted beams is made 5 deg. or more to the perpendicular drawn on a resonator surface. CONSTITUTION:A band-shaped region having an active layer 4 is formed by mesa etching down to the GaAs substrate 1 with a chemical etchant. Next, on etching with an etchant, only a P-type Al0.6Ga0.4As layer 5 is etched into a constriction 8. Further etching easily removes the active Al0.12Ga0.88As layer 4 located at the constriction 8, which layer comes as wide as the layer 5 arranged thereon and can form the constriction 8. Next, an N-type Al0.4Ga0.6As layer 9, a P-type Al0.4Ga0.6As layer 10, and an N-type Al0.4Ga0.6As layer 11 are successively formed by the second crystal growth. Here, the layer 9 can be controlled in thickness at the interface between the GaAs substrate 1 and an N-type Al0.4Ga0.6As layer 2, and the layer 11 successively formed can easily be located at the constriction 8 in the band-shaped region. |
| 公开日期 | 1986-04-19 |
| 申请日期 | 1984-09-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88223]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | FURUSE TAKAO. Semiconductor laser. JP1986077382A. 1986-04-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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