Manufacture of semiconductor laser device
文献类型：专利
| 作者 | UNO TOMOAKI; SHIBATA ATSUSHI |
| 发表日期 | 1990-07-25 |
| 专利号 | JP1990188979A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To enable a production process to be simplified, an element characteristics to be uniform by using the crystal growth method of a gaseous phase for embedded crystal growth of a semiconductor laser device in a construction with a diffraction grating at the inside and to obtain an improved single vertical mode oscillation characteristics since the diffraction grating with a large coupling coefficient can be obtained. CONSTITUTION:A first semiconductor layer 2 of first conductive type, a second semiconductor layer 3 of first conductive type which becomes an active layer, a third semiconductor layer 4 of second conductive type which becomes a waveguide layer are subjected to epitaxial growth on a compound semiconductor substrate 1 of first conductive type in sequence and the surface of the semiconductor layer 4 is etched selectively for forming a diffraction grating 5. Then, after forming a laser resonator structure 6 of stripe shape by selectively etching the layer reaching the semiconductor layer 2 in vertical direction in reference to a groove of the diffraction grating 5, a fourth semiconductor layer 7 of second conductive type and a fifth semiconductor layer 8 of first conductive type are subjected to epitaxial growth by the crystal growth method of gaseous phase. Then, after performing etching from the upper part of the above laser resonator structure 6 to the semiconductor layer 7 selectively in stripe shape, a sixth semiconductor layer 10 of second conductive type is subjected to epitaxial growth. |
| 公开日期 | 1990-07-25 |
| 申请日期 | 1989-01-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88225]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | UNO TOMOAKI,SHIBATA ATSUSHI. Manufacture of semiconductor laser device. JP1990188979A. 1990-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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