Semiconductor laser apparatus
文献类型：专利
| 作者 | OKAJIMA MASASUE; WATANABE YUKIO; NISHIKAWA YUKIE |
| 发表日期 | 1991-12-13 |
| 专利号 | JP1991283692A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser apparatus |
| 英文摘要 | PURPOSE:To make band gap energy of an active layer in the vicinity of a resonator larger than that of other parts to improve maximum light output of continuous operation by providing a V-shaped or an inversed V-shaped groove along a direction of the resonator in the vicinity of an end face of the resonator of a substrate. CONSTITUTION:A stripe V-shaped groove 21 is formed by means of etching in the vicinity of an end face of a resonator of an n-GaAs substrate 10. At the same time a center part in a direction of the resonator is etched to a depth approximately equal to a bottom of the V-sheped groove 2 A side 22 of the V-shaped groove 21 is approximately similar to a (111) surface. Then an n- InGaAlP clad layer 11, an undoped InGaP active layer 12 and a p-InGaAlP clad layer 13 are formed on the substrate 10. The layer 13 is selectively etched to a middle part with an SiO2 film as a mask to form a stripe mesa part 23. Then an n-GaAs current block layer 14 and a p-GaAs ohmic contact layer 15 are formed to form electrodes 16, 17. Thus band gap energy of a crystal grown on the surface 22 is large. |
| 公开日期 | 1991-12-13 |
| 申请日期 | 1990-03-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88233]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | OKAJIMA MASASUE,WATANABE YUKIO,NISHIKAWA YUKIE. Semiconductor laser apparatus. JP1991283692A. 1991-12-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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