半導体レーザ装置の製造方法
文献类型：专利
| 作者 | 武本 彰 |
| 发表日期 | 1995-04-19 |
| 专利号 | JP1995036462B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置の製造方法 |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having excellent controllability, stability, high efficiency, and high speed response, by a method wherein inversion is begun from a part where impurity concentration decreases in a second current blocking layer, i.e., a top part of thin layer thickness in the vicinity of a mesa, by diffusing second conductivity type impurity of slow diffusion speed. CONSTITUTION:On a P-type semiconductor substrate 11, a mesa part composed of an active layer 12 and an N-type first clad layer 13a is formed by etching. After the mesa part is filled with a P-type second current blocking layer 15, an N-type first current blocking layer 14 and a P-type buried layer 16, an N-type second clad layer 13b is formed. In this crystal growth process, impurity of slow diffusion speed, e.g., Te is used for impurity in the N-type first current blocking layer 14, and impurity of high diffusion speed, e.g., Zn is used for impurity in the P-type second current blocking layer 15 and the P-type buried layer 16. The impurity concentration in the first current blocking layer 14 is made higher than the second current blocking layer 15 and the buried layer 16. After that, when the P-type semiconductor substrate 11 is kept at a high temperature, and impurity is diffused, inversion is generated, and the N-type first and second clad layers 13a, 13b are isolated from the N-type first current blocking layer 14. |
| 公开日期 | 1995-04-19 |
| 申请日期 | 1987-09-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88243]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 武本 彰. 半導体レーザ装置の製造方法. JP1995036462B2. 1995-04-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。