Semiconductor laser having an algainp cladding layer
文献类型：专利
| 作者 | YOSHIDA ICHIRO; KATSUYAMA TSUKURU; HASHIMOTO JUN-ICHI |
| 发表日期 | 1994-06-29 |
| 专利号 | CA2112319A1 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 加拿大 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser having an algainp cladding layer |
| 英文摘要 | ABSTRACT OF THE DISCLOSURE A semiconductor laser includes a GaAs substrate, anactive layer made of a semiconductor material having a band gapenergy smaller than that of GaAs, and a top clad having an AlGaInP cladding layer. An index antiguiding typesemiconductor laser is constituted based on the abovestructure. A top clad includes a base layer formed on theactive layer and a protrusion strip for current injectionprotruding from the base layer and having an AlGaInP claddinglayer. An AlGaInP light diffusion layer with an Al proportionsmaller than that of the AlGaInP cladding layer and inclusiveof zero, is formed on the base layer adjacent to the protrusionstrip. The base layer has such a thickness as allows laseroscillation light to leak out to the light diffusion layer. |
| 公开日期 | 1994-06-29 |
| 申请日期 | 1993-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88249]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | YOSHIDA ICHIRO,KATSUYAMA TSUKURU,HASHIMOTO JUN-ICHI. Semiconductor laser having an algainp cladding layer. CA2112319A1. 1994-06-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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