Manufacture of p-type cds
文献类型：专利
| 作者 | OKUYAMA HIROYUKI; AKIMOTO KATSUHIRO; IKEDA MASAO |
| 发表日期 | 1992-10-06 |
| 专利号 | JP1992280687A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of p-type cds |
| 英文摘要 | PURPOSE:To restrain holes from occurring in a P-type CdS even if it is of P-type so as to enhance the P-type CdS in crystallinity, reliability, and yield for the formation of a light emitting element high in emission efficiency of light short in wavelength by a method wherein CdS is doped with oxygen 10-10 atom/cm in a dose to form a P-type CdS. CONSTITUTION:A CdS layer 2 is epitaxially grown on a GaAs single crystal substrate 1 through a molecular beam epitaxy method or the like. Thereafter, a CdS 2a is doped with oxygen 10-100atom/cm in a dose to form a P-type CdS. At this point, If oxygen is less than 10 atom/cm in dose, the CdS 2a can not be fully turned into P-type, and if oxygen exceeds 10 atom/cm in dose, the CdS 2a is not good enough in crystallinity. CdS doped with oxygen atoms where holes are restrained from occurring is excellent in crystallinity and turned into P-type. As the CdS concerned is shallow in acceptor level, high in activation rate, and excellent in crystallinity, a light emitting element which emits light of short wavelengths and is high in luminous efficiency can be obtained. |
| 公开日期 | 1992-10-06 |
| 申请日期 | 1991-03-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88254]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | OKUYAMA HIROYUKI,AKIMOTO KATSUHIRO,IKEDA MASAO. Manufacture of p-type cds. JP1992280687A. 1992-10-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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