Manufacture of light-emitting element
文献类型：专利
| 作者 | NAKAJIMA KAZUO |
| 发表日期 | 1986-12-20 |
| 专利号 | JP1986290790A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of light-emitting element |
| 英文摘要 | PURPOSE:To obtain a high resistor having a large energy gap by adding one or a plurality of Fe, Co, Ni or to AlGaInAs or AlInAs, growing the elements in a liquid phase and forming a buried layer. CONSTITUTION:A buffer layer 2, an active layer 3, a clad layer 4 and an electrode layer 5 are grown on an N-InP substrate 1 in a liquid-phase epitaxial manner. A mask such as an silicon nitride mask is shaped to the surface of the center, and a buried layer section is removed through etching. A high resistance layer in which Fe, Co, Ni and Cr are doped to AlGaInAs or AlInAs is grown in the liquid-phase epitaxial manner to form a desired buried layer 10. AlGaIn or AlInAs to which these Fe, etc. are doped can be lattice-matched with the InP substrate, thus increasing Eg at high resistance. |
| 公开日期 | 1986-12-20 |
| 申请日期 | 1985-06-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88257]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NAKAJIMA KAZUO. Manufacture of light-emitting element. JP1986290790A. 1986-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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