Distributed feedback type semiconductor laser
文献类型：专利
| 作者 | AKIBA SHIGEYUKI; UKOU KATSUYUKI; SAKAI KAZUO; MATSUSHIMA YUUICHI |
| 发表日期 | 1985-10-14 |
| 专利号 | JP1985202974A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To stabilize single-wavelength operation, by combining window regions on both sides of the laser region, with a distributed feedback type semiconductor (DFB) laser having an uneven phase-inverting region. CONSTITUTION:Formed on an N type InP substrate 1 are an N type InGaAsP waveguide layer 2, an InGaAsP light emitting layer 3 and a P type InGaAsP buffer layer 4. Window regions consisting of a P type InP layer 5 and an N type InP layer 13 of a semiconductor which has a larger forbidden band width and a smaller refractive index than those of the light emitting layer 3 are formed on both sides of the laser oscillating region with a length of ld, while a phase-inverting region 8 in which uneven cyclic phase is inverted by about 180 deg. is formed near the central portion of the laser oscillating region. Non-reflective coating 17 is formed on both the end faces of the window regions and electrodes 9, 10 are mounted on the top and bottom faces. |
| 公开日期 | 1985-10-14 |
| 申请日期 | 1983-10-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88271]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | AKIBA SHIGEYUKI,UKOU KATSUYUKI,SAKAI KAZUO,et al. Distributed feedback type semiconductor laser. JP1985202974A. 1985-10-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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