Semiconductor laser triode
文献类型：专利
| 作者 | OGAWA MASAKI |
| 发表日期 | 1985-07-25 |
| 专利号 | JP1985140776A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser triode |
| 英文摘要 | PURPOSE:To reduce the size of an element by collecting the function of a device, in which a semiconductor laser diode and a modulation circuit are integrated in a monolithic manner, in the three terminal element. CONSTITUTION:Each layer of a p type GaAs buffer layer 2, a second clad layer 3, a GaAs active layer 4 and a clad layer 5 is laminated on a p type GaAs substrate 1, and an n type GaAs layer 7 brought into contact with a current injection region 6, a high-resistance GaAs layer 8 brought into contact with a current non-injection region and an n type GaAs layer 9 on the layer 8 are formed. A gate electrode 11 is shaped to the layer 7, and an ohmic electrode 12 is formed on the layer 9. An ohmic electrode 13 is further formed on the substrate According to the constitution, laser oscillation can be turned ON-OFF easily by voltage applied to the electrode 1 The size of an element is reduced extremely because a current control section is unified with a laser oscillation section. |
| 公开日期 | 1985-07-25 |
| 申请日期 | 1983-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88276]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | OGAWA MASAKI. Semiconductor laser triode. JP1985140776A. 1985-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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