Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | FUKUZAWA TADASHI; KAYANE NAOKI; NAKATSUKA SHINICHI; KAJIMURA TAKASHI |
| 发表日期 | 1987-05-19 |
| 专利号 | JP1987108590A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce reflected returned beam noises by forming a region, into which ions IIA are implanted and in which a change into the mixed crystal of a superlattice is generated through heat treatment, and a means, through which currents are constricted mainly to another region close to the region, to a superlattice layer in the vicinity of an active layer for a semiconductor laser. CONSTITUTION:An N-type Ga0.5Al0.5As clad layer 16, a GaAs/GIlAs multiple quantum well type laser active layer 15, a superlattice optical absorption layer 16, a P-type Ga0.5Al0.5As clad layer 18 and an N-type GaAs cap layer 19 are grown on an N-type GaAs substrate 13, and a P-type Ga0.3Al0.7As clad layer is shaped between the layer 15 and the layer 16. F ions are implanted to a region 24 as a mask M1 for implanting ions, and Mg ions are implanted at the same acceleration voltage. The mask M1 is removed and a mask is formed anew and F ions are implanted, and the mask is removed and the whole is annealed in an As atmosphere. Since a crystal-mixing region 17 is 50mum wide and a P region 20 is 3mum wide in a section B, a laser displays the same operation as a narrow stripe type laser, and constricts currents. Accordingly, the excellent laser resisting noises due to reflected returned beams is obtained. |
| 公开日期 | 1987-05-19 |
| 申请日期 | 1985-11-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88277]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | FUKUZAWA TADASHI,KAYANE NAOKI,NAKATSUKA SHINICHI,et al. Semiconductor laser and manufacture thereof. JP1987108590A. 1987-05-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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