Manufacture of semiconductor element
文献类型：专利
| 作者 | SATO FUMIHIKO; IMAMOTO HIROSHI; MATSUMOTO MIKIO; EBARA MASAHIRO |
| 发表日期 | 1992-08-03 |
| 专利号 | JP1992211187A |
| 著作权人 | OMRON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor element |
| 英文摘要 | PURPOSE:To suppress the interface coupling current at the joint of a mesa section and its surrounding buried layer in a mesa type semiconductor laser and to improve the adhesion (prevent the peeling) between a semiconductor wafer and an Al2O3 buried layer and, at the same time, to improve the quality of the buried layer (to prevent the occurrence of cracks in the buried layer) in a ridge waveguide type semiconductor laser. CONSTITUTION:After a mesa section is formed in a semiconductor wafer and at least the mesa section is dipped in ammonium sulfide ((NH4)2S), high- resistance or insulating buried layers (16) are provided in the low land areas on both sides of the mesa section to nearly the same level as that of the upper surface of the mesa section. When a ridge waveguide type semiconductor laser is manufactured, the (NH4)2S dipping treatment is also performed before an Al2O3 buried layer is formed after a ridge section is formed. |
| 公开日期 | 1992-08-03 |
| 申请日期 | 1991-01-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88279]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON CORP |
| 推荐引用方式 GB/T 7714 | SATO FUMIHIKO,IMAMOTO HIROSHI,MATSUMOTO MIKIO,et al. Manufacture of semiconductor element. JP1992211187A. 1992-08-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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