High output semiconductor laser
文献类型：专利
| 作者 | BESSHO YASUYUKI; TABUCHI NORIO |
| 发表日期 | 1991-08-15 |
| 专利号 | JP1991187284A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | High output semiconductor laser |
| 英文摘要 | PURPOSE:To maintain basic transverse mode oscillation even at the time of high output oscillation by widening the width of a stripe trench at the end, and also putting one part of the end into current noninjection structure. CONSTITUTION:This is composed of a substrate 1, a block layer 2 being a current check layer, a clad layer 3, an active layer 4, a clad layer 5, a contact layer 6, and a stripe layer 7. And for the stripe trench 7, the width of, at least, one end is wider than that of the center, and one part A of the end being wide is of current noninjection structure. Accordingly, the optical output density at the end face is reduced, and heat generation accompanying the light absorption at the shoulder of the output check layer 2 is suppressed. Moreover, by the current noninjection structure of one part A of the end, the light absorption at the end face is suppressed, and the temperature rise at the junction is suppressed. Hereby, even if the width of the stripe trench at the end or its vicinity is not widened, high output oscillation can be done. |
| 公开日期 | 1991-08-15 |
| 申请日期 | 1989-12-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88280]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | BESSHO YASUYUKI,TABUCHI NORIO. High output semiconductor laser. JP1991187284A. 1991-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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