Method for liquid phase epitaxial growth
文献类型：专利
| 作者 | YAMAMOTO SABUROU; HAYASHI HIROSHI; MORIMOTO TAIJI; YANO MORICHIKA |
| 发表日期 | 1985-11-09 |
| 专利号 | JP1985225423A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for liquid phase epitaxial growth |
| 英文摘要 | PURPOSE:To section shape of a groove formed on the surface of a substrate is not transformed during epitaxial growth, no impurity of the substrate is mixed in a growing layer and the characteristics of a device are improved by the epitaxial growth wherein specific quantity or more of Mg is added in the liquid for growth. CONSTITUTION:On the plane (100) of a P-GaAs substrate 4, N-GaAs 5 is grown to the thickness of 0.6mum as a blocking current layer. Then, a stripe like groove 2 of wide (w) in the direction of (110) is formed by etching to reach the substrate 4 and a current route is opened. On the substrate 4 formed with the groove 2, a P-Ga0.5Al0.5As clad layer 6, a P-Ga0.85Al0.15As active layer 7, an N- Ga0.5Al0.5As clad layer 8 and an N-GaAs cap layer 9 as multilayer crystal for laser oscillation are sequentially and consecutively grown to from a double hetero junction structure. When 0.3at.% or more of Mg is added in the P-clad layer 6, the width of the groove is maintained at the initial width (w). The dispersion of the characteristics of a semiconductor laser wherein the width of the groove is maintained at a constant value is also extremely small. |
| 公开日期 | 1985-11-09 |
| 申请日期 | 1984-04-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88284]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABUROU,HAYASHI HIROSHI,MORIMOTO TAIJI,et al. Method for liquid phase epitaxial growth. JP1985225423A. 1985-11-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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