Semiconductor laser
文献类型：专利
| 作者 | SUGINO TAKASHI; ITOH KUNIO; WADA MASARU; SHIMIZU HIROKAZU; MIZUNO HIROYUKI; FUJIMOTO KAZUO |
| 发表日期 | 1984-07-24 |
| 专利号 | CA1171507A |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 加拿大 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | Abstract of the Disclosure In a semiconductor laser of terraced substrate type, comprising on a terraced substrate (11) of n-GaAs substrate, a first clad layer (12) of n-GaAlAs, an active layer (13) of non-doped GaAlAs, a second clad layer (14) of p-GaAlAs and a current limiting layer (15) of n-GaAs, and further thereon a thick overriding layer (19) of n-GaAlAs with strip shaped opening (191), are epitaxially formed, and a current injection layer (16) is formed by Zn diffusion through the opening (191) in a manner one corner (161) of the injection front penetrate the current limiting layer (15) and reaches the second clad layer (14). By means of thick overriding layer (19), shortcircuiting between the active layer (13) and a p-side electrode (7) is prevented. |
| 公开日期 | 1984-07-24 |
| 申请日期 | 1982-03-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88285]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | SUGINO TAKASHI,ITOH KUNIO,WADA MASARU,et al. Semiconductor laser. CA1171507A. 1984-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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