半導体レーザ
文献类型：专利
| 作者 | 池田 昌夫; 森田 悦男 |
| 发表日期 | 1998-09-04 |
| 专利号 | JP2821600B2 |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To obtain a complete crystal under an optimum MOCVD condition at 680 deg.C and to make an oscillation wavelength short by a method wherein individual layers constituting an AlGaInP-based laser are grown by using a compound semiconductor substrate where a crystal plane tilted at a prescribed angle from a 111B crystal plane is used as a main face. CONSTITUTION:An n-type GaAs buffer layer 12, a first clad layer 13, an active layer 14, a second clad layer 15, a P-type GaInP cap layer 16 and a P-type GaAs cap layer 17 are grown, by MOCVD under an optimum condition, on an n-type GaAs substrate 11 where a crystal plane tilted at 2 deg. is used as a main face and which is doped with Si. Then, a Ti/Pt/Au layer 18 and a stripe- shaped Au layer 19 are formed; ions are implanted; a high-resistance region 21 is formed. An oscillation wavelength of this DH semiconductor laser is 649nm by a pulse operation at room temperature and is made shorter by 30nm or above. |
| 公开日期 | 1998-11-05 |
| 申请日期 | 1988-09-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88287]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | 池田 昌夫,森田 悦男. 半導体レーザ. JP2821600B2. 1998-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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