Semiconductor light emitting device
文献类型：专利
| 作者 | NISHITANI YORIMITSU |
| 发表日期 | 1989-03-01 |
| 专利号 | JP1989053590A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To realize a structure in which AlxIn1-xAs can be used as the material of a cladding layer by a method wherein an opposite conductivity type AlxIn1-xAs cladding layer, an InGaAsP active layer and a one conductivity type InP cladding layer are successively formed so as to fill a trench formed in an opposite conductivity type InP substrate. CONSTITUTION:An n-type InP layer 2 is formed on a p-type InP substrate 1 by liquid growth and a V-trench 3 with a depth of 2-3 mum is formed. Then, a p-type AlxIn1-xAs cladding layer 4, an undoped active layer 5 and an n-type InP cladding layer 6 are successively formed so as to fill the V-trench 3. In other words, a sliding boat containing liquid composition melt is put into a furnace and the temperature of the boat is elevated and then lowered to make the p-type AlxIn1-xAs cladding layer 4 grow. After that, the InGaAsP active layer 5 and, successively, an n-type InP cladding layer 6 are formed by chilling. With this constitution, the V-trench 3 is filled and a laser layer structure is formed in it and the surface of a substrate is approximately flat. After that, an n-type side electrode and a p-type side electrode are formed on the upper and lower surfaces of the substrate respectively. |
| 公开日期 | 1989-03-01 |
| 申请日期 | 1987-08-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88297]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NISHITANI YORIMITSU. Semiconductor light emitting device. JP1989053590A. 1989-03-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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