Compound semiconductor laser
文献类型：专利
| 作者 | TAMAMURA KOJI; HONDA KAZUO; AKIMOTO KATSUHIRO; OGAWA JUNKO |
| 发表日期 | 1988-03-11 |
| 专利号 | JP1988056981A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Compound semiconductor laser |
| 英文摘要 | PURPOSE:To realize reduction of threshold current, and stabilization and uniformity of characteristics, by a method wherein current limiting by utlizing crystal anisotropy of carrier density or current concentrating by forming a current path is performed. CONSTITUTION:On the main surface of a substrate 1, for example, GaAs single crystal substrate, an inclined plane 2 is formed. Thereby the (100) crystal face and the one different from (100) face are made to face a main surface 1a. On these crystal surfaces, a III-V compound semiconductor layer is grown by, for example, an organic metal vapor phase epitaxy which is so-called MOCVD. A current concentration region 3 is formed in the manner in which a current path is limited by utilizing the difference of carrier density from each crystal surface to a growth region. Therefore laser light emission is generated by forming a local part in which the density of injected carrier is large, that is, a part of large gain. Thereby, a gain-guide type can be formed wherein the threshold current is small, and uniform stable characteristics are realized. |
| 公开日期 | 1988-03-11 |
| 申请日期 | 1986-08-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88298]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | TAMAMURA KOJI,HONDA KAZUO,AKIMOTO KATSUHIRO,et al. Compound semiconductor laser. JP1988056981A. 1988-03-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。