Light frequency converting element
文献类型：专利
| 作者 | BAN YUUZABUROU; TANIUCHI TETSUO; SERIZAWA AKIMOTO |
| 发表日期 | 1984-06-30 |
| 专利号 | JP1984113424A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light frequency converting element |
| 英文摘要 | PURPOSE:To obtain a frequency converting element having a novel structure using a semiconductor by laminating optical waveguides consisting of core layers and clad layers on an optical waveguide consisting of clad layers and an inserted core layer, and forming an electrode on the rear side and five divided electrodes on the front side. CONSTITUTION:An optical waveguide consisting of an n-InP(Sn) clad layer 2, a GaAsP(Zn) core layer 3, and a p-InP(Zn) clad layer 4, and an optical wveguide consisting of a p-InGaAs(Zn) core layer 5 and an n-InP(Sn) clad layer clad layer 6 are formed on an n-InP substrate crystal When voltage is between electrodes 7, 12 so as to impress voltage in the reverse direction to the p-n junction between the layers 5, 6 the light of the layer 3 is branched to the layer 5. When voltage is impressed to an electrode 8 so as to impress voltage to the p-n junction between the layers 3, 2, the light phase of the layer 3 is changed by pi. When modulation voltage is impressed to an electrode 9 the light of the layer 5 is modulated, and when negative modulation voltage is impressed to an electrode 10, the light of the layer 3 is modulated, and the light of the layer 5 is synthesized with the light of the layer 3 by impressing voltage to an electrode 1 |
| 公开日期 | 1984-06-30 |
| 申请日期 | 1982-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88303]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | BAN YUUZABUROU,TANIUCHI TETSUO,SERIZAWA AKIMOTO. Light frequency converting element. JP1984113424A. 1984-06-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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