Semiconductor laser
文献类型：专利
| 作者 | OSHIMA MASAAKI; TSURUTA TORU; MATSUKI MICHIO |
| 发表日期 | 1989-06-22 |
| 专利号 | JP1989160074A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable a single vertical mode to be achieved extremely easily by installing a multi-mode oscillation Fabry-Perot type laser on a submount with a diffraction grid. CONSTITUTION:A diffraction grid 2 is cut by a pitch of 0.65mum on an Si submount substrate Also, Ti, Ni, and Pb/Sn solder 3 are mounted to the rear side as metals to be bonded to the stem. Also, a stage difference is provided to the depth which a semiconductor laser active layer corresponds to from the diffraction grid surface and metal 11 consisting of Ti, Ni, and Pb/Sn is mounted. A semiconductor laser with a wavelength of 3mum of embedding type with a Fabry-Perot oscillator consisting of an n-InP clad layer 5, an InGaAsP active layer 6, a P-InP clad layer 7, a P-InGaAsP cap layer 8, a p-side electrode 9, and n-side electrode 10 is bonded to an n-InP substrate 4. If a minus terminal of power supply is connected to an electrode 10 and a plus terminal of power supply is connected to 3 and current is allowed to flow in this construction, the strength difference of oscillation main and sub modes shows an improved single vertical mode oscillation. |
| 公开日期 | 1989-06-22 |
| 申请日期 | 1987-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88304]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OSHIMA MASAAKI,TSURUTA TORU,MATSUKI MICHIO. Semiconductor laser. JP1989160074A. 1989-06-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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