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文献类型：专利
| 作者 | KASAHARA KENICHI |
| 发表日期 | 1992-08-20 |
| 专利号 | JP1992051997B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To enable to reduce the size and to modulate at a high speed by alternately laminating P type semiconductor layers having a thickness of the degree equal to de Broglie's wave length of electron and hole or less and N type semiconductor layers to form a multilayer thin film and providing a light modulator in part thereof. CONSTITUTION:P type semiconductor layers 3a-3d made of P type In0.53Ga0.47 As and N type semiconductor layers 4a-4d made of N type In0.53Ga0.47As are alternately laminated on a clad layer 32 to form a multilayer thin film. The film is isolated to left and right regions via a slot 38. The right side 39 of the slot 38 is a light emitting unit which operates as a semiconductor laser, and the left side 40 is a light modulator in which the end face opposed to the slot 38 is formed vertically to the optical axis by a reactive ion etching method. The light emitted from the unit 39 reflected on both end faces of the modulator 40, and again returned to the unit 39 to unstabilize the oscillation is avoided by slightly inclining the both end faces of the modulator 40 from the direction perpendicular to the optical axis. |
| 公开日期 | 1992-08-20 |
| 申请日期 | 1983-03-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88306]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | KASAHARA KENICHI. -. JP1992051997B2. 1992-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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