Semiconductor laser device and manufacturing method thereof
文献类型：专利
| 作者 | HIROYAMA, RYOJI; UETANI, TAKAHIRO; OOTA, KIYOSHI; KOMEDA, KOJI; SHONO, MASAYUKI; IBARAKI, AKIRA; YODOSHI, KEIICHI |
| 发表日期 | 1999-10-05 |
| 专利号 | US5963572 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and manufacturing method thereof |
| 英文摘要 | A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5x107cm-3 or less. The n-type current blocking layer has a thickness of 0.4 mu m or less. |
| 公开日期 | 1999-10-05 |
| 申请日期 | 1996-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88308]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | HIROYAMA, RYOJI,UETANI, TAKAHIRO,OOTA, KIYOSHI,et al. Semiconductor laser device and manufacturing method thereof. US5963572. 1999-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。