Semiconductor device
文献类型：专利
| 作者 | ISHINO, MASATO; SASAI, YOICHI |
| 发表日期 | 1990-10-02 |
| 专利号 | US4961198 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device |
| 英文摘要 | A semiconductor device includes a semiconductor substrate having a plurality of mesa stripes whose widths are different from each other. Quantum well layers are formed on the mesa stripes respectively and have different band gap energies. The quantum well layers include ultra-thin epitaxial layers respectively. Semiconductor elements are formed on the mesa stripes respectively and include the quantum well layers respectively. Thicknesses of the ultra-thin layers are preferably equal to or less than 500 angstroms. |
| 公开日期 | 1990-10-02 |
| 申请日期 | 1989-01-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88320]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | ISHINO, MASATO,SASAI, YOICHI. Semiconductor device. US4961198. 1990-10-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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