Semiconductor laser and method for manufacturing the same
文献类型：专利
| 作者 | UCHIDA, SATOSHI, C/O ROHM CO.,LTD.; MATAKI, HIROSHI, C/O ROHM CO.,LTD. |
| 发表日期 | 1995-12-27 |
| 专利号 | EP0667661A3 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and method for manufacturing the same |
| 英文摘要 | A semiconductor laser comprising an active layer having a light-emitting region of striped structure, a cladding layer formed on the active layer, another cladding layer formed under the active layer, the active layer being interposed between the cladding layer and the another cladding layer, facets formed on both ends of a stripe of the light-emitting region in which a part of light emitted is radiated, remaining light is refelected and amplifying the remaining light, wherein the semiconductor laser includes a means for having a minimum value of a coherence in a range between 2 mW and 7 mW of output of a light radiated from one of the facet which is a light output, and for preventing a phenomenon in which the output is reduced in a range at most 25 mW in accordance with an increase of the current, varied by a variation of a current applied to the active layer. |
| 公开日期 | 1995-12-27 |
| 申请日期 | 1995-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88324]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | UCHIDA, SATOSHI, C/O ROHM CO.,LTD.,MATAKI, HIROSHI, C/O ROHM CO.,LTD.. Semiconductor laser and method for manufacturing the same. EP0667661A3. 1995-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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