Optically bistable semiconductor laser
文献类型：专利
| 作者 | NOBUHARA HIROYUKI |
| 发表日期 | 1990-07-16 |
| 专利号 | JP1990181490A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optically bistable semiconductor laser |
| 英文摘要 | PURPOSE:To obtain an optically bistable semiconductor laser, in which input light is separated from output light in a simple process, by a method wherein one time of a crystal growth and two times of disorderlinesses of a multiquantum well layer are performed. CONSTITUTION:An MQW(a multi quantum well) layer 11 is grown on a semiinsulative Si substrate 10 and a disorderliness of the layer 11 due to a doping of an N-type impurity is performed at regions 3 and 4. A disorderliness of the layer 11 due to a doping of a P-type impurity is performed at regions 5 and 6. The disorderlinesses of the layer 11 are drying processes, such as a thermal diffusion of impurity atoms, an ion implantation and the like, a plurality of sheets of large-diameter wafers can be treated simultaneously by a vapor growth method, in which a material cost is low, in a crystal growth as well and the number of times of growth is also sufficed with one time. Therefore, this way is suitable for mass production and a reduction in cost. As the disorderlinesses of the layer 11 occur isotropically, the configuration of the cross part of waveguide parts is freely selected and can be formed according to a mask pattern at the time when the thermal diffusion of the impurity atoms, the ion-implantation and the like are performed and the separation of input light from output light can be performed. Moreover, as the layer 11 can be formed on the semiinsulative substrate, a parasitic capacity is decreased and a reset operation due to an electrical pulse is speeded up. |
| 公开日期 | 1990-07-16 |
| 申请日期 | 1989-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88326]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NOBUHARA HIROYUKI. Optically bistable semiconductor laser. JP1990181490A. 1990-07-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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