Method of manufacturing semiconductor laser
文献类型：专利
| 作者 | OHNAKA, KIYOSHI; OGURA, MOTOTSUGU |
| 发表日期 | 1992-09-01 |
| 专利号 | US5143863 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing semiconductor laser |
| 英文摘要 | According to the structure of the invention, an AlGaInP cladding layer of one conductive type, an active layer, and an AlGaInP cladding layer of other conductive type greater in thickness in stripes are formed on a GaAs substrate, and an insulating film, AlGaInP or amorphous layer smaller in refractive index than the AlGaInP cladding layer are formed at both sides of the stripes, wherein the light can be confined and guided also in the direction parallel to the active layer, and the light can be index-guided both in the direction parallel to the active layer and in the direction vertical thereto, so that a laser having an extremely smaller astigmatism may be presented. What is more, the current blocking layer disposed at the outer side of the insulating film, AlGaInP or amorphous layer is high in thermal conductivity, and the heat generated in the vicinity of the active layer may be efficiently released. The invention also relates to the method of fabricating the laser composed in such structure. |
| 公开日期 | 1992-09-01 |
| 申请日期 | 1991-04-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88328]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | OHNAKA, KIYOSHI,OGURA, MOTOTSUGU. Method of manufacturing semiconductor laser. US5143863. 1992-09-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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