Semiconductor laser element
文献类型：专利
| 作者 | MATSUMOTO AKIHIRO; HOSOBANE HIROYUKI; MATSUI KANEKI |
| 发表日期 | 1990-07-12 |
| 专利号 | JP1990180084A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To provide a long time and stable operation with high output by forming a 2-layer structure outside a stripe region and a light absorption layer near an active layer of a 2-layer structure, and making the Al mixed crystal ratio of the layer farther from the active layer larger than that of the light absorption layer. CONSTITUTION:Clad layers 17, 19 containing Al near an active layer 18, and a stripe region formed by increasing the thickness of the clad layer 17 are provided, and the outside of the stripe region is formed in a 2-layer structure of a current blocking layer 15 and a second buffer layer 14. With such a structure, the average thermal expansion coefficient outside a V-shaped groove 16 can be made substantially equal to that inside the V-shaped groove 16, thereby alleviating the stress concentration of an active layer 18 near both shoulders of the V-shaped groove 16. The current blocking layer 15 near the active layer 18 is a light absorption layer, and the Al mixed crystal ratio of a second buffer layer farther from the active layer 18 is larger than that of the light absorption layer. Thus, a long time and stable operation can be performed with high output. |
| 公开日期 | 1990-07-12 |
| 申请日期 | 1988-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88333]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO AKIHIRO,HOSOBANE HIROYUKI,MATSUI KANEKI. Semiconductor laser element. JP1990180084A. 1990-07-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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