Semiconductor laser device
文献类型：专利
| 作者 | YOSHIZAWA MISUZU; INOUE HIROAKI; TATENO KIMIO; OSHIMA MASAHIRO |
| 发表日期 | 1992-07-28 |
| 专利号 | JP1992206791A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device having big secondary harmonics output by guiding secondary harmonics of a fundamental wave through a transparent waveguide path to reflect outward and to specify output of the secondary harminics. CONSTITUTION:A transparent waveguide path 1 is brought sufficiently near an active layer 3 so as to efficiently perform Cherenkov radiation of the secondary harmonics generated in an active layer 3. Then, while being guided in the transparent waveguide path 1 for outwardly reflicting, its output is made not less than 10 to the output of the fundamental wave. Further, one end of the transparent waveguide path 1 is made semiconical having a vertical sngle theta in order to make the Cherenkov-radiated secondary higher harmonics parallel light. |
| 公开日期 | 1992-07-28 |
| 申请日期 | 1990-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88335]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | YOSHIZAWA MISUZU,INOUE HIROAKI,TATENO KIMIO,et al. Semiconductor laser device. JP1992206791A. 1992-07-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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